Review—Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates
نویسندگان
چکیده
Aluminium nitride (AlN) crystalline substrate has emerged as a striking material and received tremendous attention for applications in high power electronics (HPE), deep-ultraviolet (DUV) light sources due to its exceptional properties. Single crystal growth of AlN by physical vapour transport (PVT) technique, the necessity large diameter native substrates fabrication HPE DUV devices are described here. Two competing approaches PVT utilised produce initial single seeds namely, starting with self-nucleation followed iterative homo-epitaxial enlarging steps, directly seeding on closely lattice-matched foreign desired hetero-epitaxial growth. Both these intended grow bulk crystals from which wafers might be prepared further devices. The approach is specifically comprehensively reviewed this present work. A specific given using 6H- 4H- polytype silicon carbide (SiC) substrates. issues hetero-epitaxially grown such presence misfit dislocations, control low-angle grain boundaries, incorporation unintentional impurities, highlighted together recent progress made achievement about 2.5-inch dia. free-standing wafer approach.
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2021
ISSN: ['2162-8769', '2162-8777']
DOI: https://doi.org/10.1149/2162-8777/abe6f5